<p>두 업체는 막대한 투비용을 전부 소진하고 상업용 칩 생산에는 실패하였다.각각 우한·진안 프로젝트라고 불렸던 두 기업은 삼성전자와 TSMC가 세계 시장을 선도하는 14나노미터(㎚·80억분의 1ｍ) 이하 공정 상품 양산을 목표로 설립됐다. 이들 회사는 몇 년 내로 7나노미터 초미세 공정 상품까지 만들겠다는 야심 찬 포부를 제시했었다.</p>
<p>FC 방식 반도체 기판은 칩에 솔더를 붙이 문제는 범핑 노동을 거치고, 이를 직후집어서(플립칩) 기판에 연결완료한다. FC 방법은 전선(와이어)으로 칩과 기판을 연결하는 기존 와이어 본딩보다 칩-기판 사이 거리가 짧아 전기신호 손실이 작고 입출력(I/O) 단자 수를 크게 늘릴 수 있다.</p>
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